EE Special Seminar
III-V acoustic devices and systems
Abstract: In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance falls short. GaN, a III-V semiconductor, is proven to be the material of choice for high-frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for acoustic microsystems. This talk discusses the application of GaN in timing, integrated sensing, and acoustic meta-materials.
Contact: Lucinda Acosta at 626 395 4843 firstname.lastname@example.org